{"title":"非晶硫系相变半导体的电子输运性质研究进展(特邀论文)","authors":"Jie Liu","doi":"10.1109/S3S.2017.8308733","DOIUrl":null,"url":null,"abstract":"The amorphous chalcogenide phase change semiconductors exhibit a series of peculiar yet technologically important electron transport properties, which have attracted intensive research attention in recent years. Despite their promising application scenario, these electron transport properties' fundamental governing physics remains an unsolved scientific puzzle which is still under debate. This paper reviews these measured peculiar electron transport properties, their technological significance, and their existing theoretical explanations. The open questions are summarized, in order to invoke further research attention.","PeriodicalId":333587,"journal":{"name":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Review of progress in understanding the electron transport properties of amorphous chalcogenide phase change semiconductors (Invited paper)\",\"authors\":\"Jie Liu\",\"doi\":\"10.1109/S3S.2017.8308733\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The amorphous chalcogenide phase change semiconductors exhibit a series of peculiar yet technologically important electron transport properties, which have attracted intensive research attention in recent years. Despite their promising application scenario, these electron transport properties' fundamental governing physics remains an unsolved scientific puzzle which is still under debate. This paper reviews these measured peculiar electron transport properties, their technological significance, and their existing theoretical explanations. The open questions are summarized, in order to invoke further research attention.\",\"PeriodicalId\":333587,\"journal\":{\"name\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2017.8308733\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2017.8308733","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Review of progress in understanding the electron transport properties of amorphous chalcogenide phase change semiconductors (Invited paper)
The amorphous chalcogenide phase change semiconductors exhibit a series of peculiar yet technologically important electron transport properties, which have attracted intensive research attention in recent years. Despite their promising application scenario, these electron transport properties' fundamental governing physics remains an unsolved scientific puzzle which is still under debate. This paper reviews these measured peculiar electron transport properties, their technological significance, and their existing theoretical explanations. The open questions are summarized, in order to invoke further research attention.