通过金属直接粘合实现3D互连

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090369

L. Di Cioccio, P. Gueguen, T. Signamarcheix, M. Rivoire, D. Scevolab, Regis Cahours, P. Leduc, M. Assous, L. Clavelier

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引用次数: 12

摘要

本文介绍了利用电路堆叠技术实现高密度三维集成的一项关键技术。在室温，大气压和铜垫的环境空气下直接铜键合，可以制作10×10 9m的垂直互连，接触电阻为10 mohm。对钨键合的首次试验也将进行回顾。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enabling 3D interconnects with metal direct bonding

This paper presents the implementation of a key technology developed for high density 3-D integration by circuit stacking. Direct copper bonding at room temperature, atmospheric pressure and ambient air of copper pads allowed the elaboration of a 10×10 9m vertical interconnect with a contact resistance of 10 mohms. First tests on tungsten bonding will be also reviewed.

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2009 IEEE International Interconnect Technology Conference

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