Anthony L. Wilson, D. Walz, Younes Lotfi, K. Merkel, M. Von Thun, T. Farris
{"title":"3.3 V电压监测器的重离子和TID特性","authors":"Anthony L. Wilson, D. Walz, Younes Lotfi, K. Merkel, M. Von Thun, T. Farris","doi":"10.1109/NSREC.2017.8115463","DOIUrl":null,"url":null,"abstract":"We present single event transient (SET) and total ionizing dose (TID) data for the single channel voltage supervisor fabricated in a 0.35μm triple-well, mixed-signal CMOS process.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"402 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heavy ion and TID characterization of 3.3 V voltage supervisors\",\"authors\":\"Anthony L. Wilson, D. Walz, Younes Lotfi, K. Merkel, M. Von Thun, T. Farris\",\"doi\":\"10.1109/NSREC.2017.8115463\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present single event transient (SET) and total ionizing dose (TID) data for the single channel voltage supervisor fabricated in a 0.35μm triple-well, mixed-signal CMOS process.\",\"PeriodicalId\":284506,\"journal\":{\"name\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"402 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2017.8115463\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2017.8115463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Heavy ion and TID characterization of 3.3 V voltage supervisors
We present single event transient (SET) and total ionizing dose (TID) data for the single channel voltage supervisor fabricated in a 0.35μm triple-well, mixed-signal CMOS process.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
