砷化镓铸造技术

Yu-Chi Wang
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引用次数: 0

摘要

砷化镓晶圆代工厂已成为射频/微波半导体供应链中不可或缺的一部分。一个可靠的GaAs代工厂必须建立其内部能力来开发尖端技术,以满足移动和基础设施市场快速增长的产品性能要求。倒装芯片碰撞工艺、BiHEMT、毫米波pHEMT和高功率GaN HEMT显然是微波/毫米波产品以更小的外形实现更高性能、更大带宽和更高功率的关键技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GaAs foundry technologies
GaAs wafer foundry has become an integral part of the RF/microwave semiconductor supply chain. A credible GaAs foundry has to establish its internal capability on developing cutting-edge technologies to meet the fast increasing product performance requirements in both mobile and infrastructure markets. Flip-chip bumping process, BiHEMT, mmW pHEMT, and high power GaN HEMT are clearly the critical technologies taking the microwave/mmW products toward higher performance, greater bandwidth, and higher power with smaller form factors.
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