光子回收和发光耦合对InGaP/Si串联器件的影响

Zekun Ren, J. Mailoa, Zhe Liu, Haohui Liu, Sarah E. Sofia, Nasim Sahraei, S. Siah, F. Lin, T. Buonassisi, I. M. Peters
{"title":"光子回收和发光耦合对InGaP/Si串联器件的影响","authors":"Zekun Ren, J. Mailoa, Zhe Liu, Haohui Liu, Sarah E. Sofia, Nasim Sahraei, S. Siah, F. Lin, T. Buonassisi, I. M. Peters","doi":"10.1109/PVSC.2015.7356236","DOIUrl":null,"url":null,"abstract":"We numerically evaluate the device impact of photon re-absorption on InGaP/Si tandem solar cells using a coupled optical-electronic device model. The presented simulation results provide guidelines for designing high performance InGaP/Si tandem device. We find that including the effects of photon recycling (PR) and luminescent coupling (LC) results in a 12.5% increase in optimum top-cell thickness for a two-terminal configuration. Furthermore, PR and LC affect the sensitivity of the tandem's conversion efficiency to various device parameters. As the InGaP bulk lifetime increases, there is an absolute efficiency increase of up to 0.7% for the two-terminal as well as the four-terminal configuration. Considering PR and LC furthermore reduces the power generation sensitivity to shunting in the two-terminal configuration. For the four-terminal configuration, photon re-absorption has a less significant impact.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Device impact of photon recycling and luminescent coupling on InGaP/Si tandems\",\"authors\":\"Zekun Ren, J. Mailoa, Zhe Liu, Haohui Liu, Sarah E. Sofia, Nasim Sahraei, S. Siah, F. Lin, T. Buonassisi, I. M. Peters\",\"doi\":\"10.1109/PVSC.2015.7356236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We numerically evaluate the device impact of photon re-absorption on InGaP/Si tandem solar cells using a coupled optical-electronic device model. The presented simulation results provide guidelines for designing high performance InGaP/Si tandem device. We find that including the effects of photon recycling (PR) and luminescent coupling (LC) results in a 12.5% increase in optimum top-cell thickness for a two-terminal configuration. Furthermore, PR and LC affect the sensitivity of the tandem's conversion efficiency to various device parameters. As the InGaP bulk lifetime increases, there is an absolute efficiency increase of up to 0.7% for the two-terminal as well as the four-terminal configuration. Considering PR and LC furthermore reduces the power generation sensitivity to shunting in the two-terminal configuration. For the four-terminal configuration, photon re-absorption has a less significant impact.\",\"PeriodicalId\":427842,\"journal\":{\"name\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2015.7356236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7356236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们使用一个耦合的光电器件模型,数值评估了光子重吸收对InGaP/Si串联太阳能电池的器件影响。仿真结果为设计高性能InGaP/Si串联器件提供了指导。我们发现,包括光子回收(PR)和发光耦合(LC)的影响,导致双端结构的最佳顶电池厚度增加了12.5%。此外,PR和LC影响串联转换效率对不同器件参数的敏感性。随着InGaP本体寿命的增加,无论是双端还是四端配置,绝对效率都提高了0.7%。考虑PR和LC进一步降低了双端配置中发电对并联的敏感性。对于四端构型,光子重吸收的影响较小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Device impact of photon recycling and luminescent coupling on InGaP/Si tandems
We numerically evaluate the device impact of photon re-absorption on InGaP/Si tandem solar cells using a coupled optical-electronic device model. The presented simulation results provide guidelines for designing high performance InGaP/Si tandem device. We find that including the effects of photon recycling (PR) and luminescent coupling (LC) results in a 12.5% increase in optimum top-cell thickness for a two-terminal configuration. Furthermore, PR and LC affect the sensitivity of the tandem's conversion efficiency to various device parameters. As the InGaP bulk lifetime increases, there is an absolute efficiency increase of up to 0.7% for the two-terminal as well as the four-terminal configuration. Considering PR and LC furthermore reduces the power generation sensitivity to shunting in the two-terminal configuration. For the four-terminal configuration, photon re-absorption has a less significant impact.
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