BULK和SOI 130NM技术在地面环境下多小区扰动响应的比较

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4558884

G. Gasiot, Philippe Roche, P. Stmicroelectronics

{"title":"BULK和SOI 130NM技术在地面环境下多小区扰动响应的比较","authors":"G. Gasiot, Philippe Roche, P. Stmicroelectronics","doi":"10.1109/RELPHY.2008.4558884","DOIUrl":null,"url":null,"abstract":"This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU percentages and rates were recorded as a function of different experimental parameters (supply voltage, test pattern, etc.). This work sheds light on the different mechanisms involved in MCU occurrence between SOI and bulk technologies.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment\",\"authors\":\"G. Gasiot, Philippe Roche, P. Stmicroelectronics\",\"doi\":\"10.1109/RELPHY.2008.4558884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU percentages and rates were recorded as a function of different experimental parameters (supply voltage, test pattern, etc.). This work sheds light on the different mechanisms involved in MCU occurrence between SOI and bulk technologies.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 19

摘要

本文介绍了用SOI和块体工艺加工的130 nm sram的α和中子实验结果。实验分析了多细胞破坏(MCU)的发生。记录不同实验参数(电源电压、测试模式等)下MCU的百分比和率。这项工作揭示了SOI和批量技术之间MCU发生的不同机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment

This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU percentages and rates were recorded as a function of different experimental parameters (supply voltage, test pattern, etc.). This work sheds light on the different mechanisms involved in MCU occurrence between SOI and bulk technologies.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 IEEE International Reliability Physics Symposium

自引率

0.00%

发文量