薄膜纳米热电偶传感器在激光和电子束辐照中的应用

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI:10.1109/SENSOR.2003.1216964

Dachen Chu, D. T. Bilir, R. F. Pease, K. Goodson

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引用次数: 21

摘要

VLSI电路中晶体管的不断缩小需要具有高空间、时间和热分辨率的测温技术。薄膜热电偶传感器具有实现小传感体积和结面积的潜力。制备了最小结尺寸为(100nm)/sup /的金/镍薄膜热电偶，并对其进行了表征。虽然较小的传感器提高了空间和时间分辨率，但数据显示塞贝克系数(温度灵敏度)降低，噪声的影响更大。这些薄膜热电偶被用来测定固体结构在激光和电子束照射下的温度分布。

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Thin film nano thermocouple sensors for applications in laser and electron beam irradiation

The continuous shrinking of transistors in VLSI circuits requires thermometry with high spatial, temporal and thermal resolution. Thin film thermocouple sensors have the potential to achieve small sensing volumes and junction areas. Gold/nickel thin film thermocouples with minimum junction size of (100 nm)/sup 2/ have been fabricated and characterized. While the smaller sensors improve spatial and temporal resolution, the data show reductions in the Seebeck coefficient (temperature sensitivity) and a larger influence of noise. These thin film thermocouples are used to determine the temperature profile of solid-state structures subjected to laser and electron beam irradiation.

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TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)

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