基于Mesfet的2- 3ghz低功耗无线降噪放大器设计

2013 Third International Conference on Advances in Computing and Communications Pub Date : 2013-08-29 DOI:10.1109/ICACC.2013.112

P. B, J. P

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引用次数: 2

摘要

设计了一种基于NEC 0.3μm GaAs MESFET技术的低噪声放大器(LNA)，该放大器采用改进的级串结构，利用两个通用源晶体管。在2-3GHz范围内，设计的LNA噪声系数小于0.65dB，最大固有增益为18.4dB, P1dB为2dBm, IIP3为-1.6dBm，电源电压为3V时功耗为20mW。设计的LNA动态范围为60.6dB。特性阻抗选择为50O。设计了所提出的LNA的自定义布局。

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Design of a Mesfet based Low Noise Amplifier with Improved Noise Figure for Low Power Wireless Applications in 2-3 GHz

A Low Noise Amplifier (LNA) based on NEC 0.3μm GaAs MESFET technology has been designed with a modified cascode configuration which makes use of two common source transistors. In the 2-3GHz range, the designed LNA has a noise figure less than 0.65dB, maximum intrinsic gain of 18.4dB, P1dB of 2dBm, IIP3 of -1.6dBm and 20mW power consumption at a supply voltage of 3V. The dynamic range of the designed LNA is 60.6dB. The characteristic impedance is chosen as 50O. The custom layout of the proposed LNA has been designed.

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2013 Third International Conference on Advances in Computing and Communications

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