全片数字辅助LDO调节器与改进的调节和瞬态响应

Han Li, Chenchang Zhan, Ning Zhang
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引用次数: 7

摘要

本文提出了一种增强了稳压和瞬态响应的全片混合模式低差(LDO)稳压器。采用米勒补偿电容器和缓冲级来实现稳定性和提高功率MOS栅极压转率。超高速电压缓冲器有助于进一步提高负载瞬态恢复速度,并由于其更宽的电压摆动而减少芯片面积。在数字调节部分的帮助下,支持的最大负载电流显着提高。概念验证LDO设计采用标准的0.18 mm CMOS技术制造。最大负载电流150ma,输出电压1v,压降电压0.2 V。负载调节为0.17 mV/mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fully-on-Chip Digitally Assisted LDO Regulator with Improved Regulation and Transient Responses
This paper proposes a fully-on-chip mixed-mode low-dropout (LDO) regulator with regulation and transient response enhanced. A Miller compensation capacitor and a buffer stage are used to achieve stability and improve power MOS gate slew rate. The ultra-fast voltage buffer helps further improve the load transient recovery speed and reduce the chip area due to its wider voltage swing. With the help of the digital regulation part, the supported maximum load current is significantly improved. The proof-of-concept LDO design is fabricated in a standard 0.18-mm CMOS technology. The maximum load current is 150 mA, the output voltage is 1 V and the dropout voltage is 0.2 V. The load regulation is 0.17 mV/mA.
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