非线性工艺设计规则缩放的定量方法[VLSI]

S. M. Gold, Richard B. Brown, Bruce Bernhardt
{"title":"非线性工艺设计规则缩放的定量方法[VLSI]","authors":"S. M. Gold, Richard B. Brown, Bruce Bernhardt","doi":"10.1109/ARVLSI.1999.756041","DOIUrl":null,"url":null,"abstract":"This paper describes a quantitative methodology for selecting nonlinear design rule scale factors that provide the most cost-efficient improvements in IC performance and area. The methodology includes identifying the design rules which have the greatest impact on the scaling objective and analyzing the area and performance improvements as these rules are scaled through a range of practical scale factors. Power and delay improvement data are then combined with die cost estimates to produce a cost/benefit ratio, a quantitative metric for design rule scaling cost-efficiency. The slopes and inflection points of cost/benefit vs. scale factor plots will guide process engineers in selecting scale factors for the various design rules. This procedure is repeated using the results of one iteration as the starting point for the next. The cost/benefit analysis methodology is demonstrated by comparing embedded static RAMs implemented in a complementary GaAs (CGaAs/sup TM/) process. The SRAMs are generated by a process-independent, optimizing SRAM compiler which can create SRAM macrocells for any complementary technology. A cost/benefit analysis of the CGaAs design rules shows that when operating under a fixed spending cap for process scaling research, development, and capital equipment acquisition, nonlinear scaling can provide greater improvements in area and performance than linear scaling. The results also show that for a 0.5 /spl mu/m CGaAs process to be fabricated in high volume, the first scaling step should be a 30% reduction of the source drain area and via/metal pitch, gate metal to ohmic spacing, and gate metal spacing design rules.","PeriodicalId":358015,"journal":{"name":"Proceedings 20th Anniversary Conference on Advanced Research in VLSI","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A quantitative approach to nonlinear process design rule scaling [VLSI]\",\"authors\":\"S. M. Gold, Richard B. Brown, Bruce Bernhardt\",\"doi\":\"10.1109/ARVLSI.1999.756041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a quantitative methodology for selecting nonlinear design rule scale factors that provide the most cost-efficient improvements in IC performance and area. The methodology includes identifying the design rules which have the greatest impact on the scaling objective and analyzing the area and performance improvements as these rules are scaled through a range of practical scale factors. Power and delay improvement data are then combined with die cost estimates to produce a cost/benefit ratio, a quantitative metric for design rule scaling cost-efficiency. The slopes and inflection points of cost/benefit vs. scale factor plots will guide process engineers in selecting scale factors for the various design rules. This procedure is repeated using the results of one iteration as the starting point for the next. The cost/benefit analysis methodology is demonstrated by comparing embedded static RAMs implemented in a complementary GaAs (CGaAs/sup TM/) process. The SRAMs are generated by a process-independent, optimizing SRAM compiler which can create SRAM macrocells for any complementary technology. A cost/benefit analysis of the CGaAs design rules shows that when operating under a fixed spending cap for process scaling research, development, and capital equipment acquisition, nonlinear scaling can provide greater improvements in area and performance than linear scaling. The results also show that for a 0.5 /spl mu/m CGaAs process to be fabricated in high volume, the first scaling step should be a 30% reduction of the source drain area and via/metal pitch, gate metal to ohmic spacing, and gate metal spacing design rules.\",\"PeriodicalId\":358015,\"journal\":{\"name\":\"Proceedings 20th Anniversary Conference on Advanced Research in VLSI\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 20th Anniversary Conference on Advanced Research in VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARVLSI.1999.756041\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 20th Anniversary Conference on Advanced Research in VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARVLSI.1999.756041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文描述了一种定量方法,用于选择非线性设计规则比例因子,以提供最具成本效益的IC性能和面积改进。该方法包括确定对缩放目标影响最大的设计规则,并分析这些规则通过一系列实际缩放因子进行缩放时的面积和性能改进。然后将功率和延迟改进数据与模具成本估算相结合,以产生成本/效益比,这是设计规则缩放成本效率的定量度量。成本/效益与比例因子图的斜率和拐点将指导工艺工程师为各种设计规则选择比例因子。使用一次迭代的结果作为下一次迭代的起点,重复这个过程。通过比较在互补GaAs (CGaAs/sup TM/)过程中实现的嵌入式静态ram,证明了成本/效益分析方法。SRAM是由一个进程独立的,优化SRAM编译器,它可以创建任何互补技术的SRAM宏单元。对CGaAs设计规则的成本/效益分析表明,当在工艺缩放研究、开发和资本设备购置的固定支出上限下运行时,非线性缩放可以比线性缩放提供更大的面积和性能改进。结果还表明,要实现0.5 /spl mu/m CGaAs工艺的大批量生产,第一步应该是减少30%的源漏极面积和通孔/金属间距,栅极金属与欧姆间距以及栅极金属间距设计规则。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A quantitative approach to nonlinear process design rule scaling [VLSI]
This paper describes a quantitative methodology for selecting nonlinear design rule scale factors that provide the most cost-efficient improvements in IC performance and area. The methodology includes identifying the design rules which have the greatest impact on the scaling objective and analyzing the area and performance improvements as these rules are scaled through a range of practical scale factors. Power and delay improvement data are then combined with die cost estimates to produce a cost/benefit ratio, a quantitative metric for design rule scaling cost-efficiency. The slopes and inflection points of cost/benefit vs. scale factor plots will guide process engineers in selecting scale factors for the various design rules. This procedure is repeated using the results of one iteration as the starting point for the next. The cost/benefit analysis methodology is demonstrated by comparing embedded static RAMs implemented in a complementary GaAs (CGaAs/sup TM/) process. The SRAMs are generated by a process-independent, optimizing SRAM compiler which can create SRAM macrocells for any complementary technology. A cost/benefit analysis of the CGaAs design rules shows that when operating under a fixed spending cap for process scaling research, development, and capital equipment acquisition, nonlinear scaling can provide greater improvements in area and performance than linear scaling. The results also show that for a 0.5 /spl mu/m CGaAs process to be fabricated in high volume, the first scaling step should be a 30% reduction of the source drain area and via/metal pitch, gate metal to ohmic spacing, and gate metal spacing design rules.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信