CMOS手机功率放大器:未来的方向

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI:10.1109/CICC.2012.6330561

P. Asbeck, L. Larson, D. Kimball, J. Buckwalter

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引用次数: 10

摘要

虽然目前无线手机中的功率放大器市场主要由GaAs hbt满足，但CMOS技术可以提供包括高集成度，可扩展性和数字控制在内的主要优势。本文回顾了未来CMOS PA发展的可能方向，包括场效应晶体管堆叠、包络跟踪、数字预失真和基于数字控制的新架构，这些都有望增加CMOS在LTE应用中的优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CMOS handset power amplifiers: Directions for the future

While the present market for power amplifiers in wireless handsets is largely met by GaAs HBTs, CMOS technology can provide major advantages including high integration levels, scalability, and digital control. This paper reviews possible directions for future CMOS PA development including FET stacking, envelope tracking, digital predistortion, and new architectures based on digital control, that promise to add to the advantages of CMOS in LTE applications.

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Proceedings of the IEEE 2012 Custom Integrated Circuits Conference

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