基于MRAM技术的非易失性FPGA的评估

W. Zhao, E. Belhaire, V. Javerliac, C. Chappert, B. Dieny
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引用次数: 41

摘要

本文提出了一种基于MRAM技术的新型FPGA结构;我们将其命名为MFPGA(磁性FPGA)。基于SRAM技术的FPGA是近年来发展起来的,由于其高速和几乎无限的重编程次数,但是SRAM易失性,当电源关闭时,配置信息和中间数据将丢失。利用磁隧道结(MTJs)作为FPGA的存储元件,可以实现FPGA的非易失性,从而不需要外部存储器。在我们的仿真中,电路的启动时间可以减少到几百皮秒。除了快速的启动时间外,我们还可以非常简单快速地配置FPGA电路的算法和逻辑功能。使用MRAM技术的另一个优点是我们不会扩大电路表面,因为存储元件mtj在半导体表面上
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluation of a Non-Volatile FPGA based on MRAM technology
In this paper, we propose a new structure of FPGA based on MRAM technology; we name it MFPGA (magnetic FPGA). FPGA based on SRAM technology has been developed in the last years, because of its high speed and near limitless number of reprogramming, however SRAM is volatile thereby the configuration information and the intermediate data will be lost when power is turned off. By using MTJs (magnetic tunnel junction) as the storage elements of FPGA, we can realize the non-volatility of FPGA, and then we will not need the external memory. In our simulation, the start-up time of circuit can be decreased up to some hundred pico seconds. Except for the rapid start-up time, we can also configure the algorithm and logic function of the FPGA circuit very simply and rapidly. The other advantage of using MRAM technology is that we will not enlarge the circuit surface, because the storage element MTJs are on the semiconductor surface
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