{"title":"高精度准饱和BJT模型,适用于高频模拟/数字应用","authors":"T. Fuse, Y. Shuto, Y. Oowaki","doi":"10.1109/VLSIC.1995.520715","DOIUrl":null,"url":null,"abstract":"An accurate quasi-saturation BJT model is proposed for very-high-frequency analog and digital applications. In modern low-power analog and digital circuits, the BJT often operates in a low collector voltage and high collector current region. Under such a quasi-saturation condition, base and collector resistances have nonlinear characteristics and the base pushout phenomenon occurs. However, these phenomena are not taken into the conventional small-signal model accurately, so that the collector current, the small-signal input impedance, and the small-signal current gain are overestimated under the quasi-saturation condition. We have developed linearized base and collector resistance models and the physically based base pushout model for accurate circuit simulations.","PeriodicalId":256846,"journal":{"name":"Digest of Technical Papers., Symposium on VLSI Circuits.","volume":"130 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An accurate quasi-saturation BJT model for very-high-frequency analog/digital applications\",\"authors\":\"T. Fuse, Y. Shuto, Y. Oowaki\",\"doi\":\"10.1109/VLSIC.1995.520715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An accurate quasi-saturation BJT model is proposed for very-high-frequency analog and digital applications. In modern low-power analog and digital circuits, the BJT often operates in a low collector voltage and high collector current region. Under such a quasi-saturation condition, base and collector resistances have nonlinear characteristics and the base pushout phenomenon occurs. However, these phenomena are not taken into the conventional small-signal model accurately, so that the collector current, the small-signal input impedance, and the small-signal current gain are overestimated under the quasi-saturation condition. We have developed linearized base and collector resistance models and the physically based base pushout model for accurate circuit simulations.\",\"PeriodicalId\":256846,\"journal\":{\"name\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"volume\":\"130 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1995.520715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., Symposium on VLSI Circuits.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1995.520715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An accurate quasi-saturation BJT model for very-high-frequency analog/digital applications
An accurate quasi-saturation BJT model is proposed for very-high-frequency analog and digital applications. In modern low-power analog and digital circuits, the BJT often operates in a low collector voltage and high collector current region. Under such a quasi-saturation condition, base and collector resistances have nonlinear characteristics and the base pushout phenomenon occurs. However, these phenomena are not taken into the conventional small-signal model accurately, so that the collector current, the small-signal input impedance, and the small-signal current gain are overestimated under the quasi-saturation condition. We have developed linearized base and collector resistance models and the physically based base pushout model for accurate circuit simulations.