利用干膜光刻胶在无边缘生长的深硅沟槽中电沉积坡莫合金

Sangwon Park, D. Senesky, A. Pisano
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引用次数: 4

摘要

利用干膜光刻胶作为牺牲沟槽顶部,开发了一种在深硅沟槽(100¿m)中无边缘过度生长的NiFe合金电沉积工艺。干膜光刻胶防止了电沉积过程中沟槽边缘的高浓度电流通量,从而导致平面沉积地形。此外,研究了施加电流密度对电沉积NiFe薄膜材料组成的影响,得到了电流密度为100 mA/cm2时坡莫合金(Ni80Fe20)的组成。电沉积的坡莫合金薄膜的B-H响应分别为1.23 Tesla和82 Tesla的饱和磁通密度和相对磁导率。利用电沉积技术制备了由硅和坡莫合金结构组成的独立MEMS电磁线性执行器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrodeposition of Permalloy in Deep Silicon Trenches Without Edge-Overgrowth Utilizing Dry Film Photoresist
An electrodeposition process for embedding NiFe alloys in deep silicon trenches (100 ¿m) without edge-overgrowth was developed by utilizing dry film photoresist as a sacrificial trench top. The dry film photoresist prevented high concentration of current flux at the trench edges during electrodeposition leading to planar deposition topographies. In addition, the effect of the applied current density on material composition of the electrodeposited NiFe film was investigated, and the composition for permalloy (Ni80Fe20) was obtained with a current density of 100 mA/cm2. Furthermore, the B-H response of the electrodeposited permalloy films exhibited a saturation magnetic flux density and relative permeability of 1.23 Tesla and 82, respectively. The electrodeposition technique developed in this work was utilized to fabricate a free-standing MEMS electromagnetic linear actuator composed of silicon and permalloy structures.
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