用于传感器信号处理任务的带转义输出的跨阻放大器的带宽扩展方法

I. Pakhomov, P. Budyakov, A. Bugakova, A. Gavlitsky
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引用次数: 0

摘要

针对BiJ、BiJFet、BiCMOS、CMOS等工艺,提出了一种提高跨阻差分放大器(TDA)频率上限(fc)的电路方法。结果表明,在基于“折叠”级联码和对称有源负载实现的TDA经典电路中引入特殊补偿电路时,频率上限f6提高了5÷10倍。作者给出了传感器接口的TDA结构的实例,包括基于BiJFet阵列芯片AC_1.3/Z1的能够在辐射和低温下工作的TDA结构。介绍了TDA、BiJ、BiJFet和CMOS技术的计算机仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The method of the bandwidth extension of the transimpedance amplifiers with the paraphase output for the sensor signal processing tasks
The article suggests a circuit method of increasing the upper frequency limit (fc) of the transimpedance differential amplifiers (TDA) for the BiJ, BiJFet, BiCMOS, CMOS and other processes. It shows that when entering the special compensating circuits into the TDA classical circuits, realized on the base of the “folded” cascodes and the symmetrical active loads, the upper frequency limit f6 is increased by a factor of 5÷10. The authors give the examples of the TDA construction for sensor interfaces, including those ones which are based on the BiJFet array chips AC_1.3/Z1, capable to operate under radiation and low temperatures. Present the results of computer simulation for the TDA BiJ, BiJFet and CMOS technologies.
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