Al-Si-Pd合金互连的抗应力迁移性能

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference Pub Date : 1989-06-12 DOI:10.1109/VMIC.1989.78003

Y. Koubuchi, J. Onuki, M. Suwa, S. Fukada

{"title":"Al-Si-Pd合金互连的抗应力迁移性能","authors":"Y. Koubuchi, J. Onuki, M. Suwa, S. Fukada","doi":"10.1109/VMIC.1989.78003","DOIUrl":null,"url":null,"abstract":"Al-Si-Pd alloy with high stress-induced migration resistance was developed for VLSI interconnects. Pd was selected to depress grain boundary diffusion of Al alloys. The microstructures of Al matrices alloyed with Pd and Cu were investigated. The morphologies of precipitation in Al alloy conductors were examined after high-temperature heat treatment. The stress-induced migration resistances of the Al-Si-Pd and Al-Si-Cu were found to be influenced by the microstructures of Al matrices.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Stress migration resistance of Al-Si-Pd alloy interconnects\",\"authors\":\"Y. Koubuchi, J. Onuki, M. Suwa, S. Fukada\",\"doi\":\"10.1109/VMIC.1989.78003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Al-Si-Pd alloy with high stress-induced migration resistance was developed for VLSI interconnects. Pd was selected to depress grain boundary diffusion of Al alloys. The microstructures of Al matrices alloyed with Pd and Cu were investigated. The morphologies of precipitation in Al alloy conductors were examined after high-temperature heat treatment. The stress-induced migration resistances of the Al-Si-Pd and Al-Si-Cu were found to be influenced by the microstructures of Al matrices.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

开发了一种抗应力迁移的Al-Si-Pd合金用于超大规模集成电路互连。选择Pd抑制Al合金的晶界扩散。研究了Pd和Cu合金Al基体的显微组织。研究了高温热处理后铝合金导体中析出物的形貌。Al- si - pd和Al- si - cu的应力诱导迁移性能受Al基体微观结构的影响。

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Stress migration resistance of Al-Si-Pd alloy interconnects

Al-Si-Pd alloy with high stress-induced migration resistance was developed for VLSI interconnects. Pd was selected to depress grain boundary diffusion of Al alloys. The microstructures of Al matrices alloyed with Pd and Cu were investigated. The morphologies of precipitation in Al alloy conductors were examined after high-temperature heat treatment. The stress-induced migration resistances of the Al-Si-Pd and Al-Si-Cu were found to be influenced by the microstructures of Al matrices.<>

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Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

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