用于v波段锁相本地振荡器的MMIC芯片组

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.529007

A. Kanda, T. Hirota, H. Okazaki, M. Nakamae

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引用次数: 11

摘要

为实现毫米波合成器，研制了一种v波段全单片压控本振(LO)芯片。该LO仅由两个MMIC芯片组成:一个是用于15 GHz压控振荡和15-30 GHz倍频的高集成度多功能MMIC，另一个是用于30-60 GHz倍频的MMIC。输出功率为3.5 dBm/spl plusmn/1.5 dB，调谐性能为55.6 ~ 60.3 GHz, SSB相位噪声小于-80 dBc/Hz。每个电路都大大减小了尺寸，通过使用单平面结构，使总芯片面积仅为5.5 mm/sup /。据我们所知，这是v波段锁相振荡器最紧凑的MMIC芯片组。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An MMIC chip set for a V-band phase-locked local oscillator

A V-band full-monolithic voltage-controlled local oscillator (LO) chip set has been developed to realize a millimeter-wave synthesizer. The LO is composed of only two MMIC chips: one is a highly integrated multi-function MMIC for 15 GHz voltage-controlled oscillation and 15-30 GHz frequency doubling, and the other is for 30-60 GHz frequency doubling. Output power of 3.5 dBm/spl plusmn/1.5 dB and tuning performance of 55.6 to 60.3 GHz with SSB phase noise of less than -80 dBc/Hz @1 MHz offset are obtained. Each circuit is greatly reduced in size by using a uniplanar structure resulting in a total chip area of only 5.5 mm/sup 2/. To our knowledge, this is the most compact MMIC chip set for a V-band phase-locked oscillator.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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