用TEM/STEM分析表征AlGaN基DUV led氧化层

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915764

J. Bow, Jay Wang, W. Lai, Tien Y. Wang, Syuan-Yu Sie, Sheng-Po Chang, C. Kuo, J. Sheu

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引用次数: 0

摘要

通过850℃以上高温退火，在GaN外延层和AlGaN外延层的侧壁周围形成氧化镓和氧化铝层，提高了GaN基DUV led的光电性能。用透射电镜研究了氧化层的微观结构。在GaN和AlGaN外延层上观察到三氧化相。通过sadp和TEM/STEM图像，它们都被鉴定为结晶相，一个致密，两个多孔。结合STEM/EDS分析数据，这些氧化物分别为Ga2O3(I)、Ga2O3(II)、AlxGa2-xO3(I)和AlxGa2-xO3(II)。通过比较实验SADPs和模拟SADPs，推测氧化镓为β-Ga2O3。

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Characterization of Oxide Layers on AlGaN Based DUV LEDs by TEM/STEM Analysis

Optoelectrical properties of AlGaN-based DUV LEDs were improved by forming gallium oxide and aluminum-gallium oxide layers around sidewalls of GaN and AlGaN epitaxial layers by thermal annealing at temperature high than 850°C. Microstructure of oxide layers were investigated by TEM. Three oxide phases are observed on GaN and AlGaN epitaxial layers. They are all identified to be crystalline phases, one dense and two porous, by SADPs and TEM/STEM images. Combined with data of STEM/EDS analysis, these oxides are designated to be Ga2O3(I), Ga2O3(II), AlxGa2-xO3(I) and AlxGa2-xO3(II) respectively. The gallium oxide is suspected to be β-Ga2O3 by comparing experimental SADPs with simulated SADPs.

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来源期刊

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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