离子植入诱导CMOS/SOS器件失稳机制研究

22nd International Reliability Physics Symposium Pub Date : 1984-04-01 DOI:10.1109/IRPS.1984.362037

Eila B. Spialter, J. Brandewie, R. Kjar

{"title":"离子植入诱导CMOS/SOS器件失稳机制研究","authors":"Eila B. Spialter, J. Brandewie, R. Kjar","doi":"10.1109/IRPS.1984.362037","DOIUrl":null,"url":null,"abstract":"A complex charge trapping instability was identified in CMOS/SOS circuits which had failed during extended life tests. The cause of this instability was shown to be latent oxide damage from forced oxide currents during ion implantation. A conducting wafer coating during ion implant was found to eliminate the forced oxide current and to prevent the instability.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Ion Implant Induced Instability Mechanism in CMOS/SOS Device\",\"authors\":\"Eila B. Spialter, J. Brandewie, R. Kjar\",\"doi\":\"10.1109/IRPS.1984.362037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A complex charge trapping instability was identified in CMOS/SOS circuits which had failed during extended life tests. The cause of this instability was shown to be latent oxide damage from forced oxide currents during ion implantation. A conducting wafer coating during ion implant was found to eliminate the forced oxide current and to prevent the instability.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在延长寿命试验中，CMOS/SOS电路出现了复杂的电荷捕获不稳定性。这种不稳定性的原因被证明是离子注入过程中由强制氧化物电流引起的潜在氧化物损伤。在离子注入过程中，发现了一种导电晶圆涂层，可以消除强制氧化电流，防止不稳定。

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An Ion Implant Induced Instability Mechanism in CMOS/SOS Device

A complex charge trapping instability was identified in CMOS/SOS circuits which had failed during extended life tests. The cause of this instability was shown to be latent oxide damage from forced oxide currents during ion implantation. A conducting wafer coating during ion implant was found to eliminate the forced oxide current and to prevent the instability.

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22nd International Reliability Physics Symposium

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