In-Sn复合材料低温无钎焊技术

S. Choe, W. So, C.C. Lee
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引用次数: 13

摘要

器件封装通常需要一次以上的焊接操作才能完成。对于光子和光纤器件和封装,铟焊料因其延展性而变得越来越受欢迎。铟的熔融温度较低,为156/spl℃。在后续的粘接操作中,需要另一个粘接温度低于156/spl℃的工艺。理想的焊接温度应低于156/spl℃,但高于器件工作时焊料的最高温度。在本文中,我们报告了一种新的替代传统焊料使用In/Sn多层复合材料。这是一种无焊剂和无氧化的焊接技术,焊接温度为140/spl°C。在制造过程中,Cr/Sn/In/Au多层复合材料在一个高真空循环中沉积在裸硅片上,以防止氧化。沉积后,Au和In立即反应形成稳定的保护层,防止氧化。硅衬底沉积有薄的Cr/Au层。硅模与衬底在140℃的氢环境中键合。采用扫描声显微镜(SAM)分析方法对接头质量进行了评价。这种粘接技术始终如一地实现均匀和无空洞的连接。对接头截面进行了SEM和EDX分析。SEM图像显示,接头厚度均匀,为5 /spl mu/m,接头微观结构良好。SEM和EDX分析结果表明,该接头由嵌入了AuIn2晶粒的In-Sn合金组成。测量了几个接头的重熔温度。温度范围为125 ~ 150℃。这表明该接头的组成不是熔点为118℃的共晶,而是富锡的。这个有趣的结果提供了一个非常重要的优势,因为它增加了器件封装可以处理的温度。该技术的无通量特性对于粘合和组装许多新兴的不能容忍通量的光子器件是有价值的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low temperature fluxless bonding technique using In-Sn composite
Device packages usually need more than one soldering operation to complete. For photonic and fiber optics devices and packaging, indium solder has become ever more popular due to its ductility. Indium has a relatively low melting temperature of 156/spl deg/C. During subsequent bonding operations, another process with a bonding temperature lower than 156/spl deg/C is needed. Desirable bonding temperature should be lower than 156/spl deg/C but higher than the maximum temperature of the solder during device operation. In this paper, we report a new alternative to the conventional solder using In/Sn multilayer composite. This is a fluxless and oxidation-free soldering technique that has a bonding temperature of 140/spl deg/C. In fabrication, Cr/Sn/In/Au multilayer composite is deposited on bare silicon dice in one high vacuum cycle to prevent oxidation. Immediately upon deposition, Au and In react to form a stable AuIn2 protective outer layer against oxidation. Silicon substrates are deposited with thin Cr/Au layers. The silicon die and substrate are bonded in hydrogen environment at 140/spl deg/C. Scanning acoustic microscopy (SAM) analysis is used to evaluate the joint quality. This bonding technique consistently achieves uniform and void-free joints. SEM and EDX analyses also are performed on the joint cross sections. The SEM image shows uniform joint thickness of 5 /spl mu/m and joint microstructure. SEM and EDX results indicate the joint is consisted of In-Sn alloy with embedded AuIn2 grains. The re-melting temperature of several joints is measured. It ranges from 125/spl deg/C to 150/spl deg/C. This shows that the joint composition is not exactly eutectic that has a melting temperature of 118/spl deg/C, but rather is Sn-rich. This interesting result offers a very important advantage in that it increases the temperature that the device package can handle. The fluxless feature of this technology is valuable for bonding and assembling many emerging photonic devices that simply cannot tolerate flux.
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