Advances in the growth of lattice-matched III-V compounds on Si for optoelectronics

The novel direct band gap, dilute nitride Ga(NAsP)-material system allows for the first time the monolithic integration of a III/V laser material lattice matched to Si substrate. This lattice-matched approach offers the possibility for a high-quality, low defect density integration of a III/V-laser material potentially leading to long-term stable laser devices on Si-substrate. The present paper introduces this novel integration approach and discuss the monolithically growth in line with optical properties of first laser devices grown on exactly oriented (001) Si substrates.