基于h型周期结构的宽带HMSIW带通滤波器设计

2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI:10.1109/IEMENTech48150.2019.8981175

S. Moitra, J. Mishra, I. Aarya

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引用次数: 0

摘要

本文设计了半模基板集成波导(HMSIW)宽带通滤波器平面结构。在顶层导电层上刻制三个h型周期性电子带隙结构，以实现高频衰减。对几个主要参数进行了详细的研究和介绍。该技术用于在整个通频带内实现< 0.9dB的插入损耗。在阻带频率处观察到更显著的衰减(≈30dB)。该滤波器设计适用于微波c波段和x波段雷达和卫星系统。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wideband HMSIW Band Pass Filter design using H-shaped Periodic Structures

Design of half mode substrate integrated waveguide (HMSIW) wideband band pass filter planer structure is presented in this paper. Three H-shaped periodic electronic band gap structures are engraved over the top conducting layer in order to achieve attenuation of higher frequencies. Several major parameters have been studied and presented in detail. This technique is used to achieve insertion loss < 0.9dB over the entire pass band. Further more significant attenuation at the stop band frequencies (≈ 30dB) is observed. The filter is designed covering microwave C-band and X-band radar and satellite systems.

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来源期刊

2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)

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