{"title":"一种CMOS温度-频率转换器,误差为0.5/spl度/C (3 /spl sigma/),范围为-40至105/spl度/C","authors":"K. Makinwa, Martijn F. Snoeij","doi":"10.1109/ISSCC.2006.1696159","DOIUrl":null,"url":null,"abstract":"A temperature-to-frequency converter implemented in a standard CMOS process only requires a low-cost batch calibration. Its output frequency is determined by the process-independent (but temperature-dependent) thermal diffusivity of bulk silicon. The converter's inaccuracy is less than plusmn0.5degC (3sigma) over the extended industrial temperature range from -40 to 105degC","PeriodicalId":166617,"journal":{"name":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A CMOS Temperature-to-Frequency Converter with an Inaccuracy of 0.5/spl deg/C (3 /spl sigma/) from -40 to 105/spl deg/C\",\"authors\":\"K. Makinwa, Martijn F. Snoeij\",\"doi\":\"10.1109/ISSCC.2006.1696159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A temperature-to-frequency converter implemented in a standard CMOS process only requires a low-cost batch calibration. Its output frequency is determined by the process-independent (but temperature-dependent) thermal diffusivity of bulk silicon. The converter's inaccuracy is less than plusmn0.5degC (3sigma) over the extended industrial temperature range from -40 to 105degC\",\"PeriodicalId\":166617,\"journal\":{\"name\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"volume\":\"141 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2006.1696159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2006.1696159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS Temperature-to-Frequency Converter with an Inaccuracy of 0.5/spl deg/C (3 /spl sigma/) from -40 to 105/spl deg/C
A temperature-to-frequency converter implemented in a standard CMOS process only requires a low-cost batch calibration. Its output frequency is determined by the process-independent (but temperature-dependent) thermal diffusivity of bulk silicon. The converter's inaccuracy is less than plusmn0.5degC (3sigma) over the extended industrial temperature range from -40 to 105degC