{"title":"GaAs功率介面效应放大器设计","authors":"J. A. Angus, D. Abbott, E. Kelly","doi":"10.1109/EUMA.1976.332346","DOIUrl":null,"url":null,"abstract":"GaAs power MESFETs capable of producing in excess of 600 mW with 6 dB gain and 33% power added efficiency at 8 GHz have been produced. The use of these devices in amplifiers for S, C and X-bands will be described. Techniques for effective heat sinking whilst maintaining low parasitics will be discussed together with the characterisation of the devices, including a technique for measuring device 'S' parameters under pulse bias conditions. Examples of amplifiers for the 2.7 GHz to 3.3 GHz band and the 5.0 GHz to 5.5 GHz band will be presented. A 9.5 GHz amplifier using one micron gate length power FETs will be described.","PeriodicalId":377507,"journal":{"name":"1976 6th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs Power Mesfet Amplifier Design\",\"authors\":\"J. A. Angus, D. Abbott, E. Kelly\",\"doi\":\"10.1109/EUMA.1976.332346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs power MESFETs capable of producing in excess of 600 mW with 6 dB gain and 33% power added efficiency at 8 GHz have been produced. The use of these devices in amplifiers for S, C and X-bands will be described. Techniques for effective heat sinking whilst maintaining low parasitics will be discussed together with the characterisation of the devices, including a technique for measuring device 'S' parameters under pulse bias conditions. Examples of amplifiers for the 2.7 GHz to 3.3 GHz band and the 5.0 GHz to 5.5 GHz band will be presented. A 9.5 GHz amplifier using one micron gate length power FETs will be described.\",\"PeriodicalId\":377507,\"journal\":{\"name\":\"1976 6th European Microwave Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 6th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1976.332346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 6th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1976.332346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs power MESFETs capable of producing in excess of 600 mW with 6 dB gain and 33% power added efficiency at 8 GHz have been produced. The use of these devices in amplifiers for S, C and X-bands will be described. Techniques for effective heat sinking whilst maintaining low parasitics will be discussed together with the characterisation of the devices, including a technique for measuring device 'S' parameters under pulse bias conditions. Examples of amplifiers for the 2.7 GHz to 3.3 GHz band and the 5.0 GHz to 5.5 GHz band will be presented. A 9.5 GHz amplifier using one micron gate length power FETs will be described.
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