降低znse基绿色半导体激光器异质结构抽运所用电子束能量的可能性

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling Pub Date : 2010-11-09 DOI:10.1109/LFNM.2010.5624177

M. Zverev, N. Gamov, E. V. Zdanova, V. B. Studionov, D. Peregoudov, S. Ivanov, I. Sedova, S. Sorokin, S. Gronin, P. Kop’ev

{"title":"降低znse基绿色半导体激光器异质结构抽运所用电子束能量的可能性","authors":"M. Zverev, N. Gamov, E. V. Zdanova, V. B. Studionov, D. Peregoudov, S. Ivanov, I. Sedova, S. Sorokin, S. Gronin, P. Kop’ev","doi":"10.1109/LFNM.2010.5624177","DOIUrl":null,"url":null,"abstract":"Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12–300 K and electron energies of 3.5–8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on the possibility to reduce the electron energy at room temperature down to 1–2 keV value.","PeriodicalId":117420,"journal":{"name":"2010 10th International Conference on Laser and Fiber-Optical Networks Modeling","volume":"190 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On a possibility to reduce the electron beam energy used for pumping of ZnSe-based green semiconductor laser heterostructures\",\"authors\":\"M. Zverev, N. Gamov, E. V. Zdanova, V. B. Studionov, D. Peregoudov, S. Ivanov, I. Sedova, S. Sorokin, S. Gronin, P. Kop’ev\",\"doi\":\"10.1109/LFNM.2010.5624177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12–300 K and electron energies of 3.5–8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on the possibility to reduce the electron energy at room temperature down to 1–2 keV value.\",\"PeriodicalId\":117420,\"journal\":{\"name\":\"2010 10th International Conference on Laser and Fiber-Optical Networks Modeling\",\"volume\":\"190 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 10th International Conference on Laser and Fiber-Optical Networks Modeling\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LFNM.2010.5624177\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 10th International Conference on Laser and Fiber-Optical Networks Modeling","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LFNM.2010.5624177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

详细研究了znse基激光异质结构中电子阈值电流密度在12 ~ 300 K和3.5 ~ 8.1 keV温度范围内的温度依赖性。在电子能量E = 8 keV，温度T = 50 K时测得阈值电流密度最小值为0.2 A/cm2。通过对实验和模拟数据的分析，表明了将室温下的电子能量降低到1 - 2kev的可能性。

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On a possibility to reduce the electron beam energy used for pumping of ZnSe-based green semiconductor laser heterostructures

Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12–300 K and electron energies of 3.5–8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on the possibility to reduce the electron energy at room temperature down to 1–2 keV value.

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2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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