功率mosfet能量性能表征方法的分析与应用

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356589

G. Van den bosch, P. Moens, P. Gassot, D. Wojciechowski, G. Groeseneken

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引用次数: 13

摘要

对功率mosfet中不同的能量性能(EC)表征方法进行了理论和实验比较。在传统的钳位电感开关(CIS)中，测量条件难以独立控制。此外，理论分析表明，CIS结果不是唯一的，而是取决于测量电路的参数。另一种方法是使用矩形功率脉冲。已经考虑了各种实现，结果表明，能量能力数据彼此之间以及与CIS数据匹配得很好。讨论了覆盖在功率晶体管上的厚铜层对电导率的影响。

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Analysis and application of energy capability characterization methods in power MOSFETs

A theoretical and experimental comparison is made between different energy capability (EC) characterization methods in power MOSFETs. In traditional clamped inductive switching (CIS) the measurement conditions are difficult to control independently. Moreover, theoretical analysis suggests that the CIS results are not unique but depend on measurement circuit parameters. An alternative method uses rectangular power pulses. Various implementations have been considered and the resulting energy capability data have been shown to match well with one another and with the CIS data. The influence on EC of a thick Cu layer covering the power transistor is demonstrated.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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