IDDQ和VLV测试的实验结果

J. Chang, Chao-Wen Tseng, Yi-Chin Chu, S. Wattal, M. Purtell, E. McCluskey
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引用次数: 36

摘要

设计并制作了实验测试芯片,对不同的测试技术进行了评估。根据晶圆探头提供的结果,通过第一阶段测试的5491个芯片中有309个被封装以进行进一步研究。本文介绍了最终封装试验的实验设置和初步结果。我们重点研究了各种缺陷类别之间的相关性,包括IDDQ故障、极低电压(VLV)故障、时序无关组合(TIC)缺陷和非TIC缺陷。我们使用2个电源电压进行VLV测试。在每个电源电压下使用两个测试速度。9个模具仅VLV布尔测试不合格,其中7个被确认具有高IDDQ测量结果。我们还调查了100%单卡故障(SSF)、转换故障和IDDQ测试集的测试转义的缺陷类别。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental results for IDDQ and VLV testing
An experimental test chip was designed and manufactured to evaluate different test techniques. Based on the results presented in the wafer probe, 309 out of 5491 dies that passed the Stage 1 tests were packaged for further investigation. This paper describes the experimental setup and the preliminary results for the final package test. We focus on the correlation among various defect classes, including IDDQ failures, Very-Low-Voltage (VLV) failures, timing-independent combinational (TIC) defects, and non-TIC defects. We used 2 supply voltages for VLV tests. Two test speeds were used at each supply voltage. 9 dies failed only the VLV Boolean tests, and 7 of these were confirmed to have had high IDDQ measurement results. We also investigated the defect classes of the test escapes for 100% single stuck fault (SSF), transition fault, and IDDQ test sets.
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