一种具有条件休眠晶体管的容漏低漏寄存器文件

A. Agarwal, K. Roy, R. Krishnamurthy
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引用次数: 6

摘要

本文介绍了一种256/spl次/64b三读三写端口容漏低漏寄存器文件。本地位线共享一个休眠晶体管,以减少位线泄漏/容限,从而实现高fanin位线,并使用低V/sub /晶体管。休眠晶体管在访问本地位线时打开,如果动态节点保持高位,则有条件地关闭。仿真结果表明,该技术的性能提高了9%,局部位线泄漏减少了14/spl倍(与之前提出的低V/sub /相比,泄漏容错寄存器文件减少了97/spl倍),使保持器大小减少了70%,同时保持了与优化后的高性能传统高V/sub /实现相同的噪声鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A leakage-tolerant low-leakage register file with conditional sleep transistor
This paper describes a 256/spl times/64b 3-read, 3-write ported leakage tolerant low leakage register file. The local bitline shares a sleep transistor for aggressive bitline leakage reduction/tolerance to enable high fanin bitlines and uses low V/sub th/ transistors. The sleep transistor is turned on while accessing the local bitline and conditionally turned off, if the dynamic node should remain high. Simulation results shows that proposed technique achieves 9% improvement in performance with 14/spl times/ reduction in local bitline leakage (97/spl times/ reduction as compared to any previously proposed low V/sub th/, leakage tolerant register file) enabling 70% reduction in keeper size, while keeping the same noise robustness as optimized high performance conventional high V/sub th/ implementation.
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