{"title":"一个8ns单片砷化镓样品和保持放大器","authors":"R. Bayruns, N. Scheinberg, R. Goyal","doi":"10.1109/ISSCC.1987.1157149","DOIUrl":null,"url":null,"abstract":"A sample and hold with 8ns acquisition time and 170MHz bandwidth will be described. The device uses ± 5V supplies and dissipates 600mW. The circuit contains a 500MHz operational amplifier, FET switching network and an ECL translator on a 1mm2die.","PeriodicalId":102932,"journal":{"name":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"An 8ns monolithic GaAs sample and hold amplifier\",\"authors\":\"R. Bayruns, N. Scheinberg, R. Goyal\",\"doi\":\"10.1109/ISSCC.1987.1157149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A sample and hold with 8ns acquisition time and 170MHz bandwidth will be described. The device uses ± 5V supplies and dissipates 600mW. The circuit contains a 500MHz operational amplifier, FET switching network and an ECL translator on a 1mm2die.\",\"PeriodicalId\":102932,\"journal\":{\"name\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1987.1157149\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1987.1157149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A sample and hold with 8ns acquisition time and 170MHz bandwidth will be described. The device uses ± 5V supplies and dissipates 600mW. The circuit contains a 500MHz operational amplifier, FET switching network and an ECL translator on a 1mm2die.