4H-SiC上10kV沟槽栅igbt

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488011

Q. Zhang, H. Chang, M. Gomez, C. Bui, E. Hanna, J. Higgins, T. Isaacs-smith, J. Williams

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引用次数: 30

摘要

首次在4H-SiC上演示了10kV沟槽igbt。器件的绝对电阻(V/J)为290 m: 0 cm 2;比电阻(GV/GJ)为175 m: 0 cm 2，开通电压为-7.5V, 25qC;一个13m: 0 cm 2的比电阻和-4V的导通电压在150qC。采用独特的深沟槽结构，通过载流子注入增强(IE)效果改善器件的正向特性。

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10kV Trench Gate IGBTs on 4H-SiC

For the first time, 10kV trench IGBTs on 4H-SiC have been demonstrated. The devices exhibit an absolute resistance (V/J) of 290 m:o cm 2 ; specific resistance, (GV/GJ) of 175 m:o cm 2 and a –7.5V turn-on voltage at 25qC; a 13m:o cm 2 of specific resistance and a –4V of turn-on voltage at 150qC. A uniquely deep trench structure is incorporated to improve the device forward characteristics by a carrier injection enhancement (IE) effect.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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