石墨烯纳米带晶体管速度饱和区建模

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI:10.1109/SMELEC.2014.6920827

M. Hosseinghadiry, R. Ismail, F. Fotovvatikhah, M. Khaledian, M. Saeidmanesh

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引用次数: 0

摘要

提出了石墨烯纳米带(GNR)冲击电离系数的半解析模型。该模型是通过计算电子达到电离阈值能Et的概率和电子获得Et的距离推导出来的。此外，对GNR的电离阈值能进行了半解析建模。我们通过分析建模和与仿真结果的比较来证明我们的假设。利用高斯模拟器和解析模型计算电离阈能，利用动力学蒙特卡罗计算电离系数并对分析结果进行验证。最后，利用所提出的模型给出了电离分布，并进行了仿真。并与硅的结果进行了比较。

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Modeling the velocity saturation region of graphene nanoribbon transistor

A semi-analytical model for impact ionisation coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating the probability of electrons reaching ionisation threshold energy Et and the distance travelled by electron gaining Et. In addition, ionisation threshold energy is semi-analytically modeled for GNR. We justify our assumptions using analytical modeling and comparison with simulation results. Gaussian simulator together with analytical modeling is used in order to calculate ionisation threshold energy and Kinetic Monte Carlo is employed to calculate ionisation coefficient and verify the analytical results. Finally, the ionization profile is presented using the proposed models and simulation is carried out. The results are compared with that of silicon.

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2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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