{"title":"热离子阴极体系中Sc2O3本征缺陷的从头算模型","authors":"R. Jacobs, D. Morgan, J. Booske","doi":"10.1109/IVESC.2012.6264181","DOIUrl":null,"url":null,"abstract":"A defect model for Sc<sub>2</sub>O<sub>3</sub> was developed using quantum mechanical modeling and evaluated under cathode operating conditions to determine the electronic properties of Sc<sub>2</sub>O<sub>3</sub> used in cathode experiments. We find that Sc<sub>2</sub>O<sub>3</sub> can conduct well enough with a sub-ppm impurity concentration such that the limiting step of emission is not conduction through bulk Sc<sub>2</sub>O<sub>3</sub>.","PeriodicalId":249267,"journal":{"name":"IVESC 2012","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ab initio model of intrinsic defects in Sc2O3 for thermionic cathode systems\",\"authors\":\"R. Jacobs, D. Morgan, J. Booske\",\"doi\":\"10.1109/IVESC.2012.6264181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A defect model for Sc<sub>2</sub>O<sub>3</sub> was developed using quantum mechanical modeling and evaluated under cathode operating conditions to determine the electronic properties of Sc<sub>2</sub>O<sub>3</sub> used in cathode experiments. We find that Sc<sub>2</sub>O<sub>3</sub> can conduct well enough with a sub-ppm impurity concentration such that the limiting step of emission is not conduction through bulk Sc<sub>2</sub>O<sub>3</sub>.\",\"PeriodicalId\":249267,\"journal\":{\"name\":\"IVESC 2012\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IVESC 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVESC.2012.6264181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2012.6264181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ab initio model of intrinsic defects in Sc2O3 for thermionic cathode systems
A defect model for Sc2O3 was developed using quantum mechanical modeling and evaluated under cathode operating conditions to determine the electronic properties of Sc2O3 used in cathode experiments. We find that Sc2O3 can conduct well enough with a sub-ppm impurity concentration such that the limiting step of emission is not conduction through bulk Sc2O3.