{"title":"PH3流动分布对AlInP/GaInP分布bragg反射器生长的影响","authors":"Yu Tian, Li Xu, Xiao-hui Ma, Zhipeng Wei, Zhiwei Xue, Ziyue Ma, Xiaoya Han, Shuangxiang Zhang, Yinqiao Zhang, Wei Zhao, Qingxue Sui, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316211","DOIUrl":null,"url":null,"abstract":"AlInP/GaInP distributed Bragg-reflector (DBRs) were prepared by MOCVD. Influences of the flow velocity and rate of mixed gas on homogeneity of epitaxial film were investigated systematically. Compared with the change of single group V source, the uniformity of AlInP/GaInP layers was significantly improved by changing simultaneously the distribution of upper and lower nozzle group in the fixed V/III ratio.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"299 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of PH3 flow distribution on the growth of AlInP/GaInP distributed Bragg-reflector\",\"authors\":\"Yu Tian, Li Xu, Xiao-hui Ma, Zhipeng Wei, Zhiwei Xue, Ziyue Ma, Xiaoya Han, Shuangxiang Zhang, Yinqiao Zhang, Wei Zhao, Qingxue Sui, Zhimin Zhang\",\"doi\":\"10.1109/ICOOM.2012.6316211\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlInP/GaInP distributed Bragg-reflector (DBRs) were prepared by MOCVD. Influences of the flow velocity and rate of mixed gas on homogeneity of epitaxial film were investigated systematically. Compared with the change of single group V source, the uniformity of AlInP/GaInP layers was significantly improved by changing simultaneously the distribution of upper and lower nozzle group in the fixed V/III ratio.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"299 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316211\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of PH3 flow distribution on the growth of AlInP/GaInP distributed Bragg-reflector
AlInP/GaInP distributed Bragg-reflector (DBRs) were prepared by MOCVD. Influences of the flow velocity and rate of mixed gas on homogeneity of epitaxial film were investigated systematically. Compared with the change of single group V source, the uniformity of AlInP/GaInP layers was significantly improved by changing simultaneously the distribution of upper and lower nozzle group in the fixed V/III ratio.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
