退火非晶态氮化镓——纳米晶化的一种方法

Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003. Pub Date : 2003-06-29 DOI:10.1109/ICTON.2003.1264649

C. Grigorescu, H. Lee, U.D. Lanke, A. Koo, B. Ruck, O. Monnereau, R. Notonier, A. Tonetto, H. Trodahl

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引用次数: 3

摘要

研究了热退火对离子辅助沉积法制备的非晶态氮化镓薄膜结构和光学性能的影响。热退火。分别在流动氮气和水蒸气压力(1.7-2.4 torr)下进行，温度高达800/spl℃。通过对退火过程的实时扫描电镜观察发现，纳米晶的形成发生在非晶环境中，温度约为400/spl℃。对退火膜进行XRD和拉曼散射分析，证实了纳米晶(2 ~ 4 nm)的存在。光学测量结果表明，制备的薄膜有较弱的吸收边，退火后的边缘加深，子带吸收减少。

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Annealing amorphous GaN - a way to nano-crystalline state

The effects of thermal annealing on structural and optical properties of amorphous GaN thin films obtained by Ion Assisted Deposition (IAD) have been investigated. Thermal annealing. was carried out in flowing nitrogen and respectively under water vapour pressure (1.7-2.4 torr), at temperatures up to 800/spl deg/C. From SEM observations of the annealing processes in real time it appears that formation of nano-crystallites in the amorphous environment occurs at about 400/spl deg/C. XRD and Raman scattering performed on the annealed films prove the presence of nano-crystallites (2-4 nm). Optical measurements show a weak absorption edge in the as prepared film, and the deepening edge and reduced sub-band absorption after annealing.

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Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.

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