用于ism波段应用的单片CMOS线性功率放大器

Chunshan Du, Zhang-fa Liu
{"title":"用于ism波段应用的单片CMOS线性功率放大器","authors":"Chunshan Du, Zhang-fa Liu","doi":"10.1109/ISPACS.2007.4445923","DOIUrl":null,"url":null,"abstract":"A low-voltage CMOS linear power amplifier (PA) is presented for 2.4 GHz ISM-band short range wireless communication in this paper. All the inductors in the circuit are bonding-wire inductors and the capacitors are MIM capacitors. A novel adaptive biasing is used at the output stage, which dramatically increases the linear output power range as well as decreases the power dissipation at lower output power level. Grounding strategy is also considered to make the PA stable in all process corners. The PA is a two-stage configuration and is implemented in 0.35 mum 3.3 V CMOS process. The spectreRF simulation results show that the PA can deliver +25.2 dBm of linear output power with a power gain of higher than 29 dB in -4 dBm input power range.","PeriodicalId":220276,"journal":{"name":"2007 International Symposium on Intelligent Signal Processing and Communication Systems","volume":"421 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A single-chip CMOS linear power amplifier for ISM-band application\",\"authors\":\"Chunshan Du, Zhang-fa Liu\",\"doi\":\"10.1109/ISPACS.2007.4445923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-voltage CMOS linear power amplifier (PA) is presented for 2.4 GHz ISM-band short range wireless communication in this paper. All the inductors in the circuit are bonding-wire inductors and the capacitors are MIM capacitors. A novel adaptive biasing is used at the output stage, which dramatically increases the linear output power range as well as decreases the power dissipation at lower output power level. Grounding strategy is also considered to make the PA stable in all process corners. The PA is a two-stage configuration and is implemented in 0.35 mum 3.3 V CMOS process. The spectreRF simulation results show that the PA can deliver +25.2 dBm of linear output power with a power gain of higher than 29 dB in -4 dBm input power range.\",\"PeriodicalId\":220276,\"journal\":{\"name\":\"2007 International Symposium on Intelligent Signal Processing and Communication Systems\",\"volume\":\"421 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Symposium on Intelligent Signal Processing and Communication Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPACS.2007.4445923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on Intelligent Signal Processing and Communication Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPACS.2007.4445923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

介绍了一种用于2.4 GHz ism波段短距离无线通信的低压CMOS线性功率放大器。电路中所有的电感都是键合线电感,电容器都是MIM电容器。在输出级采用了一种新颖的自适应偏置,大大增加了线性输出功率范围,降低了低输出功率水平下的功耗。接地策略也被考虑,使PA在各个工艺角稳定。PA为两级配置,采用0.35 μ m 3.3 V CMOS工艺实现。频谱仿真结果表明,在-4 dBm的输入功率范围内,放大器可以提供+25.2 dBm的线性输出功率,功率增益大于29 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A single-chip CMOS linear power amplifier for ISM-band application
A low-voltage CMOS linear power amplifier (PA) is presented for 2.4 GHz ISM-band short range wireless communication in this paper. All the inductors in the circuit are bonding-wire inductors and the capacitors are MIM capacitors. A novel adaptive biasing is used at the output stage, which dramatically increases the linear output power range as well as decreases the power dissipation at lower output power level. Grounding strategy is also considered to make the PA stable in all process corners. The PA is a two-stage configuration and is implemented in 0.35 mum 3.3 V CMOS process. The spectreRF simulation results show that the PA can deliver +25.2 dBm of linear output power with a power gain of higher than 29 dB in -4 dBm input power range.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信