InGaN/GaN量子阱非均匀展宽的微观统计理论

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling Pub Date : 2010-11-09 DOI:10.1109/LFNM.2010.5624202

M. Klymenko, O. Shulika

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引用次数: 0

摘要

提出了InGaN/GaN量子阱结构非均匀展宽的微观统计理论。结果表明，非均匀展宽可以用与能量相关的相移时间来描述。导出了横向界面电位涨落的非均匀展宽与谱功率密度之间的显式关系。

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Microscopic statistical theory of Inhomogeneous broadening in InGaN/GaN quantum wells

Microscopic statistical theory of inhomogeneous broadening in InGaN/GaN quantum-well structures is developed. It is shown that inhomogeneous broadening can be described as energy-dependent daphasing time. Explicit relation between inhomogeneous broadening and spectral power density of the lateral interface potential fluctuations is derived.

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2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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