高压静电放电二极管在vf-TLP应力下的研究:TCAD方法

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2016-09-01 DOI:10.1109/EOSESD.2016.7592527

L. Di Biccari, L. Cerati, L. Zullino, A. Andreini

{"title":"高压静电放电二极管在vf-TLP应力下的研究:TCAD方法","authors":"L. Di Biccari, L. Cerati, L. Zullino, A. Andreini","doi":"10.1109/EOSESD.2016.7592527","DOIUrl":null,"url":null,"abstract":"Very fast TLP stresses applied to HV ESD diodes in forward conduction are able to reproduce well known and CDM typical effects as Forward Recovery. In this work a full RLC vf-TLP model is introduced in order to investigate HV ESD diodes electrical and physical behavior using TCAD mixed-mode simulations.","PeriodicalId":239756,"journal":{"name":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"HV ESD diodes investigation under vf-TLP stresses: TCAD approach\",\"authors\":\"L. Di Biccari, L. Cerati, L. Zullino, A. Andreini\",\"doi\":\"10.1109/EOSESD.2016.7592527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Very fast TLP stresses applied to HV ESD diodes in forward conduction are able to reproduce well known and CDM typical effects as Forward Recovery. In this work a full RLC vf-TLP model is introduced in order to investigate HV ESD diodes electrical and physical behavior using TCAD mixed-mode simulations.\",\"PeriodicalId\":239756,\"journal\":{\"name\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2016.7592527\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2016.7592527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

在正向传导的高压ESD二极管上施加非常快的TLP应力，能够再现众所周知的CDM典型正向恢复效应。在这项工作中，为了利用TCAD混合模式仿真研究高压ESD二极管的电学和物理行为，引入了一个完整的RLC vf-TLP模型。

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HV ESD diodes investigation under vf-TLP stresses: TCAD approach

Very fast TLP stresses applied to HV ESD diodes in forward conduction are able to reproduce well known and CDM typical effects as Forward Recovery. In this work a full RLC vf-TLP model is introduced in order to investigate HV ESD diodes electrical and physical behavior using TCAD mixed-mode simulations.

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来源期刊

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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