GaN晶体管同步升压变换器的死区时间发生器

2014 IEEE International Electric Vehicle Conference (IEVC) Pub Date : 2014-12-01 DOI:10.1109/IEVC.2014.7056113

M. Macellari, F. Celani, L. Schirone

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引用次数: 5

摘要

提出了一种基于GaN晶体管的同步升压变换器模拟动态死区发生器。设计了一个原型，在MHz范围内的开关频率下工作，输出电压变化很大，并通过实验证明了它能够将死区时间稳定在几纳秒内，而不受使用晶体管开关时间变化的影响。

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Dead time generator for synchronous boost converters with GaN transistors

An analog dynamic dead time generator for synchronous boost converters based on GaN transistors is presented. A prototype was designed to operate at switching frequencies in the MHz range, with wide variations of the output voltage, and experimentally demonstrated its capability to stabilize the dead time duration to a few nanoseconds, independent of wide variations of the switching times of the transistor in use.

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2014 IEEE International Electric Vehicle Conference (IEVC)

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