极低恒输入电容ESD保护电路的设计

Tung-Yang Chen, M. Ker
{"title":"极低恒输入电容ESD保护电路的设计","authors":"Tung-Yang Chen, M. Ker","doi":"10.1109/ISQED.2001.915233","DOIUrl":null,"url":null,"abstract":"Effective on-chip ESD design to solve the ESD protection challenge on the analog pins for high-frequency or current-mode applications is studied. The device dimension of ESD clamp devices in analog ESD protection circuit can be reduced to have a much small input capacitance for high-frequency applications, but it can still sustain a high HBM and MM ESD level. To find the optimized device dimensions and layout spacings on ESD clamp devices, a design model is developed to keep the input capacitance as constant as possible (within 1% variation).","PeriodicalId":110117,"journal":{"name":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","volume":"289 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Design on ESD protection circuit with very low and constant input capacitance\",\"authors\":\"Tung-Yang Chen, M. Ker\",\"doi\":\"10.1109/ISQED.2001.915233\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effective on-chip ESD design to solve the ESD protection challenge on the analog pins for high-frequency or current-mode applications is studied. The device dimension of ESD clamp devices in analog ESD protection circuit can be reduced to have a much small input capacitance for high-frequency applications, but it can still sustain a high HBM and MM ESD level. To find the optimized device dimensions and layout spacings on ESD clamp devices, a design model is developed to keep the input capacitance as constant as possible (within 1% variation).\",\"PeriodicalId\":110117,\"journal\":{\"name\":\"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design\",\"volume\":\"289 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2001.915233\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2001.915233","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

研究了有效的片上ESD设计,以解决高频或电流模式应用中模拟引脚的ESD保护挑战。模拟ESD保护电路中的ESD钳位器件的器件尺寸可以减小到高频应用中具有小得多的输入电容,但它仍然可以维持高HBM和MM ESD水平。为了找到最佳的器件尺寸和ESD钳位器件的布局间距,开发了一个设计模型,以保持输入电容尽可能恒定(变化在1%以内)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design on ESD protection circuit with very low and constant input capacitance
Effective on-chip ESD design to solve the ESD protection challenge on the analog pins for high-frequency or current-mode applications is studied. The device dimension of ESD clamp devices in analog ESD protection circuit can be reduced to have a much small input capacitance for high-frequency applications, but it can still sustain a high HBM and MM ESD level. To find the optimized device dimensions and layout spacings on ESD clamp devices, a design model is developed to keep the input capacitance as constant as possible (within 1% variation).
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