干法蚀刻过程中重金属污染及其对后续湿法蚀刻的影响研究

Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop Pub Date : 1995-11-13 DOI:10.1109/ASMC.1995.484395

J. Gil, P.K. Chun, S.K. Chae, E.M. Chun, H.K. Chung

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摘要

只提供摘要形式。干式蚀刻工艺会对工艺硅片造成严重的重金属污染，其程度取决于干式蚀刻机的类型。大多数这些污染物通过随后的湿清洗过程被去除，但铜似乎留在晶圆表面。将讨论这些污染物对工艺晶圆以及包括过滤器在内的化学浴池的影响。

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Study of heavy metal contamination from dry etching process and its effects on subsequent wet processing

Summary form only given. Dry etching process can cause a significant level of heavy metal contamination on process wafers, and the degree is dependent on the type of dry etcher. Most of these contaminants are removed through subsequent wet cleaning processes, but Cu seems to remain on the wafer surface. The effect of these contaminants on process wafers as well as chemical baths including filters will be discussed.

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Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop

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