Yong-Seo Koo, Hyun-Duck Lee, Jae-Hwan Ha, Jae-Chang Kwak, Jong-Kee Kwon
{"title":"设计了一种触发电压低、导通速度快的新型BiCMOS ESD保护电路","authors":"Yong-Seo Koo, Hyun-Duck Lee, Jae-Hwan Ha, Jae-Chang Kwak, Jong-Kee Kwon","doi":"10.1109/ICM.2009.5418608","DOIUrl":null,"url":null,"abstract":"In this paper, the design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed is proposed. The proposed ESD protection circuit is verified by the transmission line pulse system. The results show that the novel BiCMOS ESD protection circuit has lower trigger voltage of 5.98V compared with that of conventional GGNMOS. And this ESD protection circuit has faster turn-on time of about 37ns than that of the conventional substrate-triggered ESD protection circuit. Also, the ESD protection circuit pass the ESD of HBM 3.2kV and MM 210V.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"382 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed\",\"authors\":\"Yong-Seo Koo, Hyun-Duck Lee, Jae-Hwan Ha, Jae-Chang Kwak, Jong-Kee Kwon\",\"doi\":\"10.1109/ICM.2009.5418608\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed is proposed. The proposed ESD protection circuit is verified by the transmission line pulse system. The results show that the novel BiCMOS ESD protection circuit has lower trigger voltage of 5.98V compared with that of conventional GGNMOS. And this ESD protection circuit has faster turn-on time of about 37ns than that of the conventional substrate-triggered ESD protection circuit. Also, the ESD protection circuit pass the ESD of HBM 3.2kV and MM 210V.\",\"PeriodicalId\":391668,\"journal\":{\"name\":\"2009 International Conference on Microelectronics - ICM\",\"volume\":\"382 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Microelectronics - ICM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2009.5418608\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Microelectronics - ICM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2009.5418608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed
In this paper, the design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed is proposed. The proposed ESD protection circuit is verified by the transmission line pulse system. The results show that the novel BiCMOS ESD protection circuit has lower trigger voltage of 5.98V compared with that of conventional GGNMOS. And this ESD protection circuit has faster turn-on time of about 37ns than that of the conventional substrate-triggered ESD protection circuit. Also, the ESD protection circuit pass the ESD of HBM 3.2kV and MM 210V.