设计了一种触发电压低、导通速度快的新型BiCMOS ESD保护电路

Yong-Seo Koo, Hyun-Duck Lee, Jae-Hwan Ha, Jae-Chang Kwak, Jong-Kee Kwon
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引用次数: 1

摘要

本文提出了一种低触发电压、快速导通的新型BiCMOS ESD保护电路的设计。通过传输线脉冲系统对所提出的ESD保护电路进行了验证。结果表明,与传统的GGNMOS相比,新型BiCMOS ESD保护电路的触发电压为5.98V。与传统的基片触发式ESD保护电路相比,该电路的导通时间约为37ns。同时,ESD保护电路通过HBM 3.2kV和MM 210V的ESD。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed
In this paper, the design of the novel BiCMOS ESD protection circuit with low trigger voltage and fast turn-on speed is proposed. The proposed ESD protection circuit is verified by the transmission line pulse system. The results show that the novel BiCMOS ESD protection circuit has lower trigger voltage of 5.98V compared with that of conventional GGNMOS. And this ESD protection circuit has faster turn-on time of about 37ns than that of the conventional substrate-triggered ESD protection circuit. Also, the ESD protection circuit pass the ESD of HBM 3.2kV and MM 210V.
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