栅极氧化物电荷密度对VDMOS晶体管导通电阻的影响

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838777

Z. Pavlović, I. Manic, Z. Prijić, V. Davidovic, N. Stojadinovic

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引用次数: 6

摘要

本文分析了栅极氧化物电荷净密度对低压功率VDMOS晶体管导通电阻的影响。栅极氧化物电荷密度的变化通过影响通道和积累层区域的阈值电压、平带电压和载流子迁移率，影响通道电阻、积累层电阻和总体导通电阻。栅极氧化物电荷密度从10/sup 10/ cm/sup -2/变化到10/sup 11/ cm/sup -2/导致导通电阻增加20%以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of gate oxide charge density on VDMOS transistor ON-resistance

In this paper the influence of net density of gate oxide charge on low-voltage power VDMOS transistor ON-resistance is analyzed. By affecting the threshold voltage, flat-band voltage, and carrier mobilities in channel and accumulation layer regions, variations of gate oxide charge density affect the channel resistance, accumulation layer resistance, and the overall ON-resistance as well. The variation of gate oxide charge density from 10/sup 10/ cm/sup -2/ to 10/sup 11/ cm/sup -2/ causes the ON-resistance to increase for more than 20%.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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