S. Marsillac, K. Benchouk, C. E. Moctar, J. Bernède, J. Pouzet, A. Khellil, M. Jamali
{"title":"硫化法制备CuAlSe2薄膜","authors":"S. Marsillac, K. Benchouk, C. E. Moctar, J. Bernède, J. Pouzet, A. Khellil, M. Jamali","doi":"10.1051/JP3:1997249","DOIUrl":null,"url":null,"abstract":"Abstract. CuAlSe2 thinfilms havebeen synthesizedbychalcogenization ofthin Cu and Al layerssequentiallydepositedbyevaporation under vacuum. Itisshownthat CuAlSe2films are obtained with some Cu2-rise andSe phases present at thesurfaceThese phases are suppressedbyannealing under vacuum and chemical etching in a KCNsolution. Attheendoftheprocess, XRDspectrum demonstratesthat textured CuAlSe2 filmshave been obtainedwith preferential orientationofthe crystallitesalong the (l12) direction. Thegapthefilmsis2.7eV as expected. The films are nearlystoichiometric~ but theirsurface is quiterough The XPSspectra show that some Nadiffusesfromthe substrate towardthesurface during the annealing process. However, this Nais etched by KCN.1. Introduction TernaryI-III-VI2chalcopyrite semiconductorshavereceivedconsiderableattentioninrecentyearsbecauseoftheir applications in photovoltaic devices.Ifthe CuInSe2 isthe most extensively studied compound of family, some other ternary chalcopyrites haveattractedmuchattention","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"CuAlSe2 Thin Films Obtained by Chalcogenization\",\"authors\":\"S. Marsillac, K. Benchouk, C. E. Moctar, J. Bernède, J. Pouzet, A. Khellil, M. Jamali\",\"doi\":\"10.1051/JP3:1997249\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract. CuAlSe2 thinfilms havebeen synthesizedbychalcogenization ofthin Cu and Al layerssequentiallydepositedbyevaporation under vacuum. Itisshownthat CuAlSe2films are obtained with some Cu2-rise andSe phases present at thesurfaceThese phases are suppressedbyannealing under vacuum and chemical etching in a KCNsolution. Attheendoftheprocess, XRDspectrum demonstratesthat textured CuAlSe2 filmshave been obtainedwith preferential orientationofthe crystallitesalong the (l12) direction. Thegapthefilmsis2.7eV as expected. The films are nearlystoichiometric~ but theirsurface is quiterough The XPSspectra show that some Nadiffusesfromthe substrate towardthesurface during the annealing process. However, this Nais etched by KCN.1. Introduction TernaryI-III-VI2chalcopyrite semiconductorshavereceivedconsiderableattentioninrecentyearsbecauseoftheir applications in photovoltaic devices.Ifthe CuInSe2 isthe most extensively studied compound of family, some other ternary chalcopyrites haveattractedmuchattention\",\"PeriodicalId\":237595,\"journal\":{\"name\":\"Journal De Physique Iii\",\"volume\":\"132 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal De Physique Iii\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JP3:1997249\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal De Physique Iii","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JP3:1997249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Abstract. CuAlSe2 thinfilms havebeen synthesizedbychalcogenization ofthin Cu and Al layerssequentiallydepositedbyevaporation under vacuum. Itisshownthat CuAlSe2films are obtained with some Cu2-rise andSe phases present at thesurfaceThese phases are suppressedbyannealing under vacuum and chemical etching in a KCNsolution. Attheendoftheprocess, XRDspectrum demonstratesthat textured CuAlSe2 filmshave been obtainedwith preferential orientationofthe crystallitesalong the (l12) direction. Thegapthefilmsis2.7eV as expected. The films are nearlystoichiometric~ but theirsurface is quiterough The XPSspectra show that some Nadiffusesfromthe substrate towardthesurface during the annealing process. However, this Nais etched by KCN.1. Introduction TernaryI-III-VI2chalcopyrite semiconductorshavereceivedconsiderableattentioninrecentyearsbecauseoftheir applications in photovoltaic devices.Ifthe CuInSe2 isthe most extensively studied compound of family, some other ternary chalcopyrites haveattractedmuchattention
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