皮秒超声技术在先进射频计量中的优势

J. Dai, Johnny Mu, C. Kim, P. Mukundhan
{"title":"皮秒超声技术在先进射频计量中的优势","authors":"J. Dai, Johnny Mu, C. Kim, P. Mukundhan","doi":"10.1109/CSTIC52283.2021.9461541","DOIUrl":null,"url":null,"abstract":"Picosecond Ultrasonics (PULSE™Technology) has been widely adopted as the tool-of-record for metal film thickness metrology in semiconductor fabs around the world. It provides unique advantages, such as being a rapid, non-contact, nondestructive technology, and has capabilities for simultaneous multiple layer measurement. In this paper, we describe the unique advantages of Picosecond Ultrasonics for advanced radio frequency (RF) applications. RF filter process control requires stringent metrology due to tight process tolerances. The first principles-based PULSE technology does not require external calibration standards and provides robust measurement capability for multi-layer thickness measurements. For advanced RF applications, the capability of PULSE technology to measure both velocity and thickness simultaneously for transparent and semi-transparent films offers a lot of potential for not only monitoring processes but offers insight into the device performance. The PULSE technique can also simultaneously measure full stack for multilayer metal stack measurements with excellent repeatability and long-term stability which makes process control more efficient and reliable. Fast throughput makes it possible for high sampling rate for RF applications which is the key for device level process control and yield improvement.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advantages of Picosecond Ultrasonic Technology for Advanced RF Metrology\",\"authors\":\"J. Dai, Johnny Mu, C. Kim, P. Mukundhan\",\"doi\":\"10.1109/CSTIC52283.2021.9461541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Picosecond Ultrasonics (PULSE™Technology) has been widely adopted as the tool-of-record for metal film thickness metrology in semiconductor fabs around the world. It provides unique advantages, such as being a rapid, non-contact, nondestructive technology, and has capabilities for simultaneous multiple layer measurement. In this paper, we describe the unique advantages of Picosecond Ultrasonics for advanced radio frequency (RF) applications. RF filter process control requires stringent metrology due to tight process tolerances. The first principles-based PULSE technology does not require external calibration standards and provides robust measurement capability for multi-layer thickness measurements. For advanced RF applications, the capability of PULSE technology to measure both velocity and thickness simultaneously for transparent and semi-transparent films offers a lot of potential for not only monitoring processes but offers insight into the device performance. The PULSE technique can also simultaneously measure full stack for multilayer metal stack measurements with excellent repeatability and long-term stability which makes process control more efficient and reliable. Fast throughput makes it possible for high sampling rate for RF applications which is the key for device level process control and yield improvement.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"131 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461541\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

皮秒超声(PULSE™技术)已被广泛采用为世界各地半导体晶圆厂金属薄膜厚度测量的记录工具。它具有独特的优势,例如快速,非接触,非破坏性技术,并且具有同时多层测量的能力。在本文中,我们描述了皮秒超声在先进射频(RF)应用中的独特优势。由于严格的工艺公差,RF滤波器的过程控制需要严格的计量。基于第一原理的PULSE技术不需要外部校准标准,并为多层厚度测量提供了强大的测量能力。对于先进的射频应用,PULSE技术能够同时测量透明和半透明薄膜的速度和厚度,这不仅为监控过程提供了很大的潜力,而且还提供了对器件性能的洞察。PULSE技术还可以同时测量多层金属堆的全堆,具有良好的重复性和长期稳定性,使过程控制更加高效和可靠。快速吞吐使得射频应用的高采样率成为可能,这是器件级过程控制和良率提高的关键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advantages of Picosecond Ultrasonic Technology for Advanced RF Metrology
Picosecond Ultrasonics (PULSE™Technology) has been widely adopted as the tool-of-record for metal film thickness metrology in semiconductor fabs around the world. It provides unique advantages, such as being a rapid, non-contact, nondestructive technology, and has capabilities for simultaneous multiple layer measurement. In this paper, we describe the unique advantages of Picosecond Ultrasonics for advanced radio frequency (RF) applications. RF filter process control requires stringent metrology due to tight process tolerances. The first principles-based PULSE technology does not require external calibration standards and provides robust measurement capability for multi-layer thickness measurements. For advanced RF applications, the capability of PULSE technology to measure both velocity and thickness simultaneously for transparent and semi-transparent films offers a lot of potential for not only monitoring processes but offers insight into the device performance. The PULSE technique can also simultaneously measure full stack for multilayer metal stack measurements with excellent repeatability and long-term stability which makes process control more efficient and reliable. Fast throughput makes it possible for high sampling rate for RF applications which is the key for device level process control and yield improvement.
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