Norihiro Kamae, Islam A. K. M. Mahfuzul, A. Tsuchiya, H. Onodera
{"title":"具有宽供电范围的体偏置发生器,低至阈值电压,用于模内可变性补偿","authors":"Norihiro Kamae, Islam A. K. M. Mahfuzul, A. Tsuchiya, H. Onodera","doi":"10.1109/ASSCC.2014.7008858","DOIUrl":null,"url":null,"abstract":"A body bias generator (BBG) for fine-grain body biasing (FGBB) that can operate under wide supply-range is proposed. While FGBB is effective in reducing variability and power consumption, a number of BBGs are required on a die and therefore simplified design of BBGs is necessary. This paper proposes a cell-based design of a BBG that generates forward and reverse body bias voltages only from a core supply voltage ranging from the near threshold of 500mV to the nominal voltage of 1.2V. This wide operating range is achieved by a low voltage error amplifier with a Vth biasing scheme achieved by internal switched-capacitor charge pumping. We fabricated the forward/reverse BBG in a 65nm low power CMOS process to control 0.22mm2 of core circuit with the area overhead of 2.3% for the BBG.","PeriodicalId":161031,"journal":{"name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation\",\"authors\":\"Norihiro Kamae, Islam A. K. M. Mahfuzul, A. Tsuchiya, H. Onodera\",\"doi\":\"10.1109/ASSCC.2014.7008858\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A body bias generator (BBG) for fine-grain body biasing (FGBB) that can operate under wide supply-range is proposed. While FGBB is effective in reducing variability and power consumption, a number of BBGs are required on a die and therefore simplified design of BBGs is necessary. This paper proposes a cell-based design of a BBG that generates forward and reverse body bias voltages only from a core supply voltage ranging from the near threshold of 500mV to the nominal voltage of 1.2V. This wide operating range is achieved by a low voltage error amplifier with a Vth biasing scheme achieved by internal switched-capacitor charge pumping. We fabricated the forward/reverse BBG in a 65nm low power CMOS process to control 0.22mm2 of core circuit with the area overhead of 2.3% for the BBG.\",\"PeriodicalId\":161031,\"journal\":{\"name\":\"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2014.7008858\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2014.7008858","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation
A body bias generator (BBG) for fine-grain body biasing (FGBB) that can operate under wide supply-range is proposed. While FGBB is effective in reducing variability and power consumption, a number of BBGs are required on a die and therefore simplified design of BBGs is necessary. This paper proposes a cell-based design of a BBG that generates forward and reverse body bias voltages only from a core supply voltage ranging from the near threshold of 500mV to the nominal voltage of 1.2V. This wide operating range is achieved by a low voltage error amplifier with a Vth biasing scheme achieved by internal switched-capacitor charge pumping. We fabricated the forward/reverse BBG in a 65nm low power CMOS process to control 0.22mm2 of core circuit with the area overhead of 2.3% for the BBG.