高剂量辐照后4H-SiC mesfet的行为

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858597

C. Brisset, O. Noblanc, C. Picard, F. Joffre, C. Brylinski

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引用次数: 5

摘要

本研究考察了两种MESFET 4H-SiC结构对非常高总剂量水平辐照的响应。它表明，由辐照产生或刺激的电活性缺陷改变了元件的响应。具有半绝缘衬底的MESFET比在沟道和导电衬底之间有缓冲层的MESFET具有更好的剂量响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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4H-SiC MESFETs behavior after high dose irradiation

This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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