N. Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, G. Lv
{"title":"微米级结核对薄膜偏振器中电场分布的影响","authors":"N. Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, G. Lv","doi":"10.1117/12.887565","DOIUrl":null,"url":null,"abstract":"The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"284 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The influence of micron-sized nodules on the electric-field districution in thin-film polarizers\",\"authors\":\"N. Chen, Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, G. Lv\",\"doi\":\"10.1117/12.887565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.\",\"PeriodicalId\":316559,\"journal\":{\"name\":\"International Conference on Thin Film Physics and Applications\",\"volume\":\"284 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.887565\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.887565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of micron-sized nodules on the electric-field districution in thin-film polarizers
The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at ppolarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.
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