纳米电子学:从硅到石墨烯

U. Schwalke, P. Wessely, Frank Wessely, Martin Keyn, L. Rispal
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引用次数: 3

摘要

在纳米电子学的未来,使用纯硅基器件将不再是可能的,因为硅已经达到极限。碳似乎是制造高性能电子设备的一个很好的替代品。碳纳米管场效应晶体管可以作为集成电路中的有源器件,也可以作为存储单元在许多应用中使用。最近,基于石墨烯的晶体管正在成为扩展并最终取代传统平面MOSFET的另一个潜在候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanoelectronics: From silicon to graphene
In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.
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