U. Schwalke, P. Wessely, Frank Wessely, Martin Keyn, L. Rispal
{"title":"纳米电子学:从硅到石墨烯","authors":"U. Schwalke, P. Wessely, Frank Wessely, Martin Keyn, L. Rispal","doi":"10.1109/DTIS.2012.6232951","DOIUrl":null,"url":null,"abstract":"In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.","PeriodicalId":114829,"journal":{"name":"7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Nanoelectronics: From silicon to graphene\",\"authors\":\"U. Schwalke, P. Wessely, Frank Wessely, Martin Keyn, L. Rispal\",\"doi\":\"10.1109/DTIS.2012.6232951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.\",\"PeriodicalId\":114829,\"journal\":{\"name\":\"7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIS.2012.6232951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2012.6232951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.