铟锡锌氧化物薄膜晶体管的光致降解及其长期恢复

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984822

Meng Zhang, Xiaotong Ma, Zhendong Jiang, Sunbin Deng, Guijun Li, Rongsheng Chen, Yan Yan, M. Wong, H. Kwok

{"title":"铟锡锌氧化物薄膜晶体管的光致降解及其长期恢复","authors":"Meng Zhang, Xiaotong Ma, Zhendong Jiang, Sunbin Deng, Guijun Li, Rongsheng Chen, Yan Yan, M. Wong, H. Kwok","doi":"10.1109/IPFA47161.2019.8984822","DOIUrl":null,"url":null,"abstract":"Light-illumination-induced degradation and its long-term recovery in indium-tin-zinc oxide (ITZO) thin-film transistors (TFTs) are investigated. Negative threshold voltage shift and subthreshold degradation are observed under light of 546.1 nm with 14.92 mW/cm2. Short-term recovery and long-term recovery of ITZO TFT exhibit two different characteristics. Incorporated with TCAD simulations, the degradation mechanism and recovery mechanism are tentatively discussed.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Light-Illumination-Induced Degradation and Its Long-Term Recovery in Indium-Tin-Zinc Oxide Thin-Film Transistors\",\"authors\":\"Meng Zhang, Xiaotong Ma, Zhendong Jiang, Sunbin Deng, Guijun Li, Rongsheng Chen, Yan Yan, M. Wong, H. Kwok\",\"doi\":\"10.1109/IPFA47161.2019.8984822\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Light-illumination-induced degradation and its long-term recovery in indium-tin-zinc oxide (ITZO) thin-film transistors (TFTs) are investigated. Negative threshold voltage shift and subthreshold degradation are observed under light of 546.1 nm with 14.92 mW/cm2. Short-term recovery and long-term recovery of ITZO TFT exhibit two different characteristics. Incorporated with TCAD simulations, the degradation mechanism and recovery mechanism are tentatively discussed.\",\"PeriodicalId\":169775,\"journal\":{\"name\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA47161.2019.8984822\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了铟锡锌氧化物(ITZO)薄膜晶体管(TFTs)的光致降解及其长期恢复。在546.1 nm和14.92 mW/cm2的光下观察到负阈值电压偏移和亚阈值退化。ITZO TFT的短期恢复和长期恢复表现出两种不同的特征。结合TCAD仿真，对其降解机理和回收机理进行了初步探讨。

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Light-Illumination-Induced Degradation and Its Long-Term Recovery in Indium-Tin-Zinc Oxide Thin-Film Transistors

Light-illumination-induced degradation and its long-term recovery in indium-tin-zinc oxide (ITZO) thin-film transistors (TFTs) are investigated. Negative threshold voltage shift and subthreshold degradation are observed under light of 546.1 nm with 14.92 mW/cm2. Short-term recovery and long-term recovery of ITZO TFT exhibit two different characteristics. Incorporated with TCAD simulations, the degradation mechanism and recovery mechanism are tentatively discussed.

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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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