交叉点ReRAM的选择器设备

2012 13th International Workshop on Cellular Nanoscale Networks and their Applications Pub Date : 2012-10-18 DOI:10.1109/CNNA.2012.6331466

Seonghyun Kim, Wootae Lee, H. Hwang

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引用次数: 12

摘要

对压敏型双向选择器(VBS)和具有阈值开关(TS)特性的超薄NbO2器件进行了研究。高度非线性的VBS具有高电流密度(>;3×107A/cm2)和高选择性(~104)的优异性能。超薄NbO2具有优异的TS特性，如高温稳定性(~160℃)，良好的开关均匀性和极高的可扩展性。

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Selector devices for cross-point ReRAM

Both varistor-type bidirectional selector (VBS) and ultrathin NbO₂ device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>;3×10⁷A/cm²) and high selectivity (~10⁴). Ultrathin NbO₂ exhibits excellent TS characteristics such as high temperature stability (~160^oC), good switching uniformity, and extreme scalability.

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2012 13th International Workshop on Cellular Nanoscale Networks and their Applications

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